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KT611G NPN Transistor

The KT611G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT611G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT611G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT611G transistor as follows.

Circuit diagram symbol of the KT611G transistor

KT611G Transistor Specification

Transistor Code KT611G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 3W
Collector-Base Voltage (Maximum) VCB 200V
Collector-Emitter Voltage (Maximum) VCE 180V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 60MHz
Collector Capacitance CC 5pF

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