The KT6114E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT6114E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The KT6114E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the KT6114E transistor as follows.
| Transistor Code | KT6114E | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Collector Power Dissipation (Maximum) | PC | 0.7W |
| Collector-Base Voltage (Maximum) | VCB | 40V |
| Collector Current (Maximum) | IC | 1.1A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 6V |
| Forward Current Transfer Ratio (hFE Value) | 160 | |
| Transition Frequency | FT | 100MHz |
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