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KT6110V NPN Transistor

The KT6110V is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT6110V transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT6110V transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT6110V transistor as follows.

Circuit diagram symbol of the KT6110V transistor

KT6110V Transistor Specification

Transistor Code KT6110V
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 0.625W
Collector-Base Voltage (Maximum) VCB 40V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 96

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