KT315G1 NPN Transistor

The KT315G1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT315G1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT315G1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT315G1 transistor as follows.

KT315G1 Transistor Specification

Transistor Code		KT315G1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		KT26
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	35V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	100°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	250MHz

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