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KT3130E9 NPN Transistor

The KT3130E9 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT3130E9 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT3130E9 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT3130E9 transistor as follows.

Circuit diagram symbol of the KT3130E9 transistor

KT3130E9 Transistor Specification

Transistor Code KT3130E9
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 0.1W
Collector-Base Voltage (Maximum) VCB 20V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 400
Transition Frequency FT 300MHz
Collector Capacitance CC 12pF

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