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KT306VM NPN Transistor

The KT306VM is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KT306VM transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KT306VM transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KT306VM transistor as follows.

Circuit diagram symbol of the KT306VM transistor

KT306VM Transistor Specification

Transistor Code KT306VM
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 300MHz
Collector Capacitance CC 5pF

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