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KST5550 NPN Transistor

The KST5550 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KST5550 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KST5550 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KST5550 transistor as follows.

Circuit diagram symbol of the KST5550 transistor

KST5550 Transistor Specification

Transistor Code KST5550
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 1F
Collector Power Dissipation (Maximum) PC 0.35W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 140V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 100MHz
Collector Capacitance CC 6pF

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