KSD882O NPN Transistor

The KSD882O is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSD882O transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSD882O transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KSD882O transistor as follows.

KSD882O Transistor Specification

Transistor Code		KSD882O
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	90MHz
Collector Capacitance	CC	45pF

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