KSD560R NPN Transistor

The KSD560R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSD560R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSD560R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KSD560R transistor as follows.

KSD560R Transistor Specification

Transistor Code		KSD560R
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		3000

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