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KSD1616-G NPN Transistor

The KSD1616-G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSD1616-G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSD1616-G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KSD1616-G transistor as follows.

Circuit diagram symbol of the KSD1616-G transistor

KSD1616-G Transistor Specification

Transistor Code KSD1616-G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-92
Transistor SMD Code D1616X
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 100MHz
Collector Capacitance CC 19pF

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