The KSD1616-G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSD1616-G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The KSD1616-G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the KSD1616-G transistor as follows.
Transistor Code | KSD1616-G | |
---|---|---|
Transistor Type | BJT | |
Transistor Polarity | NPN | |
Transistor Material | Silicon(SI) | |
Package | TO-92 | |
Transistor SMD Code | D1616X | |
Collector Power Dissipation (Maximum) | PC | 0.75W |
Collector-Base Voltage (Maximum) | VCB | 60V |
Collector-Emitter Voltage (Maximum) | VCE | 50V |
Collector Current (Maximum) | IC | 1A |
Operating Junction Temperature (Maximum) | TJ | 150°C |
Emitter-Base Voltage (Maximum) | VEB | 6V |
Forward Current Transfer Ratio (hFE Value) | 200 | |
Transition Frequency | FT | 100MHz |
Collector Capacitance | CC | 19pF |
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