KSC815G NPN Transistor

The KSC815G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSC815G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSC815G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KSC815G transistor as follows.

KSC815G Transistor Specification

Transistor Code		KSC815G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	4pF

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