KSB13003H NPN Transistor

The KSB13003H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the KSB13003H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSB13003H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the KSB13003H transistor as follows.

KSB13003H Transistor Specification

Transistor Code		KSB13003H
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-92
Collector Power Dissipation (Maximum)	PC	1.1W
Collector-Base Voltage (Maximum)	VCB	900V
Collector-Emitter Voltage (Maximum)	VCE	530V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	9V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	4MHz
Collector Capacitance	CC	21pF

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