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KSB1116G PNP Transistor

The KSB1116G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KSB1116G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSB1116G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KSB1116G transistor as follows.

Circuit diagram symbol of the KSB1116G transistor

KSB1116G Transistor Specification

Transistor Code KSB1116G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 200
Transition Frequency FT 70MHz
Collector Capacitance CC 2.5pF

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