KSA1175G PNP Transistor

The KSA1175G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KSA1175G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KSA1175G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KSA1175G transistor as follows.

KSA1175G Transistor Specification

Transistor Code		KSA1175G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	50MHz
Collector Capacitance	CC	2.8pF

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