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KPLS350E PNP Transistor

The KPLS350E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the KPLS350E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The KPLS350E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the KPLS350E transistor as follows.

Circuit diagram symbol of the KPLS350E transistor

KPLS350E Transistor Specification

Transistor Code KPLS350E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT223
Transistor SMD Code P35
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz
Collector Capacitance CC 40pF

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