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K159NT1E NPN Transistor

The K159NT1E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the K159NT1E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The K159NT1E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the K159NT1E transistor as follows.

Circuit diagram symbol of the K159NT1E transistor

K159NT1E Transistor Specification

Transistor Code K159NT1E
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Collector Power Dissipation (Maximum) PC 0.05W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.01A
Operating Junction Temperature (Maximum) TJ 85°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 80
Collector Capacitance CC 3pF

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