JO2015A NPN Transistor

The JO2015A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the JO2015A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The JO2015A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the JO2015A transistor as follows.

JO2015A Transistor Specification

Transistor Code		JO2015A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M111
Collector Power Dissipation (Maximum)	PC	70W
Collector-Base Voltage (Maximum)	VCB	65V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	400MHz

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