JE9100G NPN Transistor

The JE9100G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the JE9100G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The JE9100G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the JE9100G transistor as follows.

JE9100G Transistor Specification

Transistor Code		JE9100G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		240
Transition Frequency	FT	300MHz
Collector Capacitance	CC	1.6pF

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