ISC3581AS1 NPN Transistor

The ISC3581AS1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the ISC3581AS1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ISC3581AS1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the ISC3581AS1 transistor as follows.

ISC3581AS1 Transistor Specification

Transistor Code		ISC3581AS1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SC72
Transistor SMD Code		581
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	55V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	150MHz

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