ISB1035AS1 PNP Transistor

The ISB1035AS1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the ISB1035AS1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The ISB1035AS1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the ISB1035AS1 transistor as follows.

ISB1035AS1 Transistor Specification

Transistor Code		ISB1035AS1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SC72
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		55
Transition Frequency	FT	100MHz

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