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IR1010 NPN Transistor

The IR1010 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the IR1010 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IR1010 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the IR1010 transistor as follows.

Circuit diagram symbol of the IR1010 transistor

IR1010 Transistor Specification

Transistor Code IR1010
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 100W
Collector-Base Voltage (Maximum) VCB 60V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 1V
Forward Current Transfer Ratio (hFE Value) 500

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