INA6006AS1 PNP Transistor

The INA6006AS1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the INA6006AS1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The INA6006AS1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the INA6006AS1 transistor as follows.

INA6006AS1 Transistor Specification

Transistor Code		INA6006AS1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SC72
Transistor SMD Code		A06
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	150V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	200MHz
Collector Capacitance	CC	2.8pF

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