INA6005AP1 PNP Transistor

The INA6005AP1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the INA6005AP1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The INA6005AP1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the INA6005AP1 transistor as follows.

INA6005AP1 Transistor Specification

Transistor Code		INA6005AP1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		BC
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		82
Transition Frequency	FT	65MHz
Collector Capacitance	CC	5.5pF

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