INA6001AP1 PNP Transistor

The INA6001AP1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the INA6001AP1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The INA6001AP1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the INA6001AP1 transistor as follows.

INA6001AP1 Transistor Specification

Transistor Code		INA6001AP1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT89
Transistor SMD Code		BG
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		140
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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