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IMH9A NPN Transistor

The IMH9A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the IMH9A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IMH9A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the IMH9A transistor as follows.

Circuit diagram symbol of the IMH9A transistor

IMH9A Transistor Specification

Transistor Code IMH9A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SO6
Transistor SMD Code H9
Collector Power Dissipation (Maximum) PC 0.1W
Collector-Base Voltage (Maximum) VCB 50V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 140MHz

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More Transistors Datasheets in SO6 Package

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