IMH8A NPN Transistor

The IMH8A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the IMH8A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IMH8A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the IMH8A transistor as follows.

IMH8A Transistor Specification

Transistor Code		IMH8A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SO6
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		68
Transition Frequency	FT	140MHz

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