IMBT4400 NPN Transistor

The IMBT4400 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the IMBT4400 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IMBT4400 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the IMBT4400 transistor as follows.

IMBT4400 Transistor Specification

Transistor Code		IMBT4400
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.31A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	200MHz
Collector Capacitance	CC	6.5pF

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