IMB1A PNP Transistor

The IMB1A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the IMB1A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IMB1A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the IMB1A transistor as follows.

IMB1A Transistor Specification

Transistor Code		IMB1A
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SO6
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		56
Transition Frequency	FT	140MHz

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