IMB10A PNP Transistor

The IMB10A is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the IMB10A transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IMB10A transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the IMB10A transistor as follows.

IMB10A Transistor Specification

Transistor Code		IMB10A
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SO6
Transistor SMD Code		B10
Collector Power Dissipation (Maximum)	PC	0.1W
Collector-Base Voltage (Maximum)	VCB	50V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		33
Transition Frequency	FT	140MHz

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