IDD1412 NPN Transistor

The IDD1412 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the IDD1412 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IDD1412 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the IDD1412 transistor as follows.

IDD1412 Transistor Specification

Transistor Code		IDD1412
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	30W
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		70
Transition Frequency	FT	10MHz

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