IDD1313 NPN Transistor

The IDD1313 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the IDD1313 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The IDD1313 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the IDD1313 transistor as follows.

IDD1313 Transistor Specification

Transistor Code		IDD1313
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO247
Collector Power Dissipation (Maximum)	PC	200W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		6

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