HX128M NPN Transistor

The HX128M is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HX128M transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HX128M transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HX128M transistor as follows.

HX128M Transistor Specification

Transistor Code		HX128M
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92S
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6.5V
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	260(TYP)MHz
Collector Capacitance	CC	5pF

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