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HSE912 NPN Transistor

The HSE912 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSE912 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE912 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSE912 transistor as follows.

Circuit diagram symbol of the HSE912 transistor

HSE912 Transistor Specification

Transistor Code HSE912
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO66
Collector Power Dissipation (Maximum) PC 15W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 40V
Operating Junction Temperature (Maximum) TJ 140°C
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 3MHz

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