HSE833 NPN Transistor

The HSE833 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSE833 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE833 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSE833 transistor as follows.

HSE833 Transistor Specification

Transistor Code		HSE833
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	150W
Collector-Base Voltage (Maximum)	VCB	170V
Collector-Emitter Voltage (Maximum)	VCE	150V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	0.5MHz

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