HSE830 PNP Transistor

The HSE830 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE830 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE830 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE830 transistor as follows.

HSE830 Transistor Specification

Transistor Code		HSE830
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	118W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	1MHz

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