HSE829 PNP Transistor

The HSE829 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE829 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE829 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE829 transistor as follows.

HSE829 Transistor Specification

Transistor Code		HSE829
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	115W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	60V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	0.8MHz

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