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HSE828 NPN Transistor

The HSE828 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSE828 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE828 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSE828 transistor as follows.

Circuit diagram symbol of the HSE828 transistor

HSE828 Transistor Specification

Transistor Code HSE828
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 115W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 140V
Operating Junction Temperature (Maximum) TJ 140°C
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 0.1MHz

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