HSE412 NPN Transistor

The HSE412 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSE412 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE412 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSE412 transistor as follows.

HSE412 Transistor Specification

Transistor Code		HSE412
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.31W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	70V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	50MHz

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