HSE3012 PNP Transistor

The HSE3012 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE3012 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE3012 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE3012 transistor as follows.

HSE3012 Transistor Specification

Transistor Code		HSE3012
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	0.5MHz

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