HSE3010B PNP Transistor

The HSE3010B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE3010B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE3010B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE3010B transistor as follows.

HSE3010B Transistor Specification

Transistor Code		HSE3010B
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	0.5MHz

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