HSE3010 PNP Transistor

The HSE3010 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE3010 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE3010 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE3010 transistor as follows.

HSE3010 Transistor Specification

Transistor Code		HSE3010
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	0.5MHz

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