HSE2012 PNP Transistor

The HSE2012 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE2012 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE2012 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE2012 transistor as follows.

HSE2012 Transistor Specification

Transistor Code		HSE2012
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	80V
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	0.5MHz

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