HSE150 NPN Transistor

The HSE150 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSE150 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE150 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSE150 transistor as follows.

HSE150 Transistor Specification

Transistor Code		HSE150
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.6W
Collector-Base Voltage (Maximum)	VCB	350V
Collector-Emitter Voltage (Maximum)	VCE	325V
Collector Current (Maximum)	IC	0.02A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	10MHz

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