HSE116 PNP Transistor

The HSE116 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE116 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE116 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE116 transistor as follows.

HSE116 Transistor Specification

Transistor Code		HSE116
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	15V
Operating Junction Temperature (Maximum)	TJ	100°C
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	7MHz

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