HSE110 PNP Transistor

The HSE110 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSE110 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSE110 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSE110 transistor as follows.

HSE110 Transistor Specification

Transistor Code		HSE110
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	15V
Operating Junction Temperature (Maximum)	TJ	100°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	5MHz

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