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HSD879 NPN Transistor

The HSD879 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSD879 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSD879 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSD879 transistor as follows.

Circuit diagram symbol of the HSD879 transistor

HSD879 Transistor Specification

Transistor Code HSD879
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-92
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 200MHz
Collector Capacitance CC 30pF

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