HSD669AT NPN Transistor

The HSD669AT is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSD669AT transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSD669AT transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSD669AT transistor as follows.

HSD669AT Transistor Specification

Transistor Code		HSD669AT
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-126
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	140MHz
Collector Capacitance	CC	14pF

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