HSD1616A NPN Transistor

The HSD1616A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSD1616A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSD1616A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSD1616A transistor as follows.

HSD1616A Transistor Specification

Transistor Code		HSD1616A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-92
Collector Power Dissipation (Maximum)	PC	0.75W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		135
Transition Frequency	FT	100MHz
Collector Capacitance	CC	19pF

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