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HSD1609S NPN Transistor

The HSD1609S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSD1609S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSD1609S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSD1609S transistor as follows.

Circuit diagram symbol of the HSD1609S transistor

HSD1609S Transistor Specification

Transistor Code HSD1609S
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-92
Collector Power Dissipation (Maximum) PC 0.9W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 140MHz
Collector Capacitance CC 3.8pF

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