HSBD434 PNP Transistor

The HSBD434 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSBD434 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSBD434 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSBD434 transistor as follows.

HSBD434 Transistor Specification

Transistor Code		HSBD434
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	36W
Collector-Base Voltage (Maximum)	VCB	22V
Collector-Emitter Voltage (Maximum)	VCE	22V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	3MHz

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